| Model | CTR (%) | V_CEO (V) | t_on/t_off (μs) | Isolation (Vrms) | Best For | |-------|---------|-----------|-----------------|------------------|-----------| | | 50-600 | 80 | 5/4 | 5,000 | General purpose, wide CTR | | PC817 | 50-600 | 35 | 4/3 | 5,000 | SMPS feedback (lower V_CEO) | | 4N35 | 100 (min) | 30 | 10/10 | 5,000 | Hobbyist, older designs | | 6N137 | - (logic) | 7 | 0.075 | 5,000 | High-speed data (10 Mbps) |
For digital logic interfaces (e.g., 5V to 3.3V), ranks A or B are sufficient. For analog applications or low I_F drive (e.g., 1 mA from a battery-powered MCU), ranks C or D provide higher sensitivity. Part 5: Switching Characteristics (Speed) The A1458 is not an ultra-high-speed device (like a logic gate optocoupler, e.g., 6N137), but it is adequate for most power supply feedback and low-speed data isolation (< 50 kHz).
Inside the package, pin 1 connects to the LED’s anode, pin 2 to its cathode. The phototransistor sits with its collector on pin 4 and emitter on pin 3. There is no base pin exposed; base current is generated solely by illumination. a1458 optocoupler datasheet
Many A1458 variants carry UL 1577, VDE 0884 (reinforced insulation), and CSA approvals. Always check the specific datasheet for regulatory marks if your design requires safety certification. Part 7: Typical Application Circuits (From Datasheet Examples) The A1458 optocoupler datasheet often includes reference circuits. Here are two common ones. Circuit 1: Digital Logic Isolation (High → Low) Scenario: Isolating a 24V PLC output to a 3.3V microcontroller input.
| Pin Number | Name | Description | |------------|-------------|------------------------------------| | 1 | Anode (A) | Positive terminal of the IR LED | | 2 | Cathode (C) | Negative terminal of the IR LED | | 3 | Emitter (E) | Output phototransistor emitter | | 4 | Collector (C)| Output phototransistor collector | | Model | CTR (%) | V_CEO (V)
The forward voltage drop of 1.2V-1.6V is typical for GaAs IR LEDs. When calculating current-limiting resistors for microcontroller outputs (e.g., 5V logic), use R = (V_OH - V_F) / I_F, where I_F is typically 5-20 mA. Output (Phototransistor) Characteristics | Parameter | Symbol | Conditions | Min | Typ | Max | Unit | |-----------|--------|-------------|-----|-----|-----|------| | Collector-Electron Breakdown | BV_CEO | I_C = 100 μA, I_F = 0 | 80 | - | - | V | | Emitter-Collector Breakdown | BV_ECO | I_E = 100 μA | 6 | - | - | V | | Dark Current (Leakage) | I_CEO | V_CE = 20V, I_F = 0, Ta=25°C | - | 10 | 100 | nA | | Dark Current at 100°C | I_CEO | V_CE = 20V, I_F = 0, Ta=100°C | - | 1 | 10 | μA |
| Rank | CTR Min (%) | CTR Max (%) | Conditions | |------|-------------|-------------|-------------| | A | 50 | 150 | I_F = 5 mA, V_CE = 5V, Ta=25°C | | B | 80 | 240 | I_F = 5 mA, V_CE = 5V, Ta=25°C | | C | 130 | 400 | I_F = 5 mA, V_CE = 5V, Ta=25°C | | D | 200 | 600 | I_F = 5 mA, V_CE = 5V, Ta=25°C | Inside the package, pin 1 connects to the
| Parameter | Symbol | Conditions | Value | Unit | |-----------|--------|-------------|-------|------| | Isolation Voltage | V_ISO | Ta=25°C, 60Hz, 1 sec | 5,000 | Vrms | | Isolation Resistance | R_IO | V_IO = 500V | 10^12 (min) | Ω | | Isolation Capacitance | C_IO | V_IO = 0V, f=1MHz | 0.8 (typ) | pF |